| PART |
Description |
Maker |
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| MHL21336 |
3G BAND RF LINEAR LDMOS AMPLIFIER
|
Motorola, Inc
|
| MHPA18010N |
CDMA Band RF Linear LDMOS Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MHL19338N |
PCS Band RF Linear LDMOS Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MHPA21010N |
UMTS Band RF Linear LDMOS Amplifier
|
Freescale Semiconductor, Inc
|
| MHL9838N |
Cellular Band RF Linear LDMOS Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MHPA21010 |
The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER
The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER
|
Motorola
|
| MHPA19010N |
PCS Band RF Linear LDMOS Amplifier PCS频段的射频线性LDMOS的放大器
|
飞思卡尔半导体(中国)有限公司
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLS6G2933S-13010 BLS6G2933S-130 BLS6G2933S-130112 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
| MHL21336 |
MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier
|
Motorola
|
